The crosstalk level increases with increasing degree of circuit integration. At the same time, requirements to their noise immunity increase. The increase in the amplitude of the pulse signals is a simple and effective method to improve noise immunity. The article discusses the synchronization system with the global distribution of low-voltage clock signal and a local increase in the amplitude using drivers with increasing voltage. Proposed technical solutions allow to set the amplitude of the clock signal individually for each functional unit.

Keywords: synchronization, noise immunity, clock signal drivers, amplitude increase, source and power rail reduction

The working conditions of spacecraft in the Earth's orbit are constantly changing. These changes are associated with the motion of spacecraft in orbit, the instability of the solar radiation flux, and also with processes in the terrestrial ionosphere. Many of these processes are predictable and most are determined by electronic and optical equipment. The range of changes in external influences is very large. Limitations on the weight and dimensions of space vehicles do not allow to provide absolute protection of electronic means from external influences from space.

Keywords: Devices for protection against electrostatic discharges, interference immunity, electromagnetic compatibility, protection against electrostatic discharges, design methods, hierarchy of protective equipment

The contemporary problems of chip manufacturing process in particular for small series are briefly reviewed. The costs optimization methods used for the preparation and launching of chip manufacturing are described in detail. New organization structures for the chip design and production are proposed. The implementation of the manufacturing process of this new type (i.e. “intelligent” production) is reviewed. The main feature of the “intelligent” production is that it takes into account not only essential technological steps but also involves design center and customer service support into the entire scheme describing the whole cycle of manufacturing. The real examples of manufacturing process modification and appropriate recommendations are given.

Keywords: chip for small series, “intelligent” manufacturing process, chip production standard route, MLM route, MPW route, production costs, modification of production route, united order.

The development of semiconductor nanoelectronics industry in the world in terms of globalization is reviewed. The main roadmaps of information technologies development are outlined. The primary method for the costs reduction is the global harmonization of technical solutions (e.g., an international standardization system) which can be achieved through the creation of global alliances. These global alliances lead to partition sectors of the market and the exchange of technological advances and by promoting national programs of information technology development, combining the efforts of public and private sectors. The forecast of the possible development of Nan electronics industry in Russia is given.

Keywords: semiconductor scheme, chip manufacturing, globalization, nanoscale semiconductor devices, information networks, chip design, design methods.

In the present paper we propose a modified approximation of a silicon bipolar transistor, which takes into account the frequency relationship of electromagnetic signals propagation in the substrate. These modifications were implemented because the experimental investigations and crosstalk simulations in the metallization layers of a silicon substrate have showed that the commonly used approximations based on lumped elements are not able to describe properly the mutual influence of signals at gigahertz frequencies. It was shown that the proposed method is suitable for high-frequency analog circuits design and it is based on sparse distribution of circuit elements and additional shielding of high-frequency chains. The reproducibility and stability of the circuit’s parameters is achieved by secondary devices which are added for correction and stabilization.

Keywords: heterostructure bipolar transistors, silicon-germanium base layer, ionizing radiation, simulation of analog cells using substrate influence effect, analog cells parameters stabilization and correction.