A method of expanding the bandwidth and improve the performance of the differential voltage divider – attenuator (AT), which have parasitic capacitance on the outputs C01, C02. Wide range of transmission of the AT provided by introducing a compensation circuit C01, C02, which is achieving data quality indicators. Simulation results of desired are shown.

Keywords: a resistive voltage divider, differential attenuator, the parasitic сapacitance load, speed, upper frequency limit, analog-to-digital converters.

Measurement results of basic characteristics of electronic module based on two specialized analog integrated circuits depending on different square area silicon detectors using source of 239Pu alpha particles is given. Processing of current pulses typically consists to convert them into a voltage by charge sensitive amplifiers and reduce noise by bandpass filters. Earlier for work with avalanche photodiode we have developed, constructed and tested two electronic modules "CRP-MDL-1" and "CRP-MDL-2". During the measurements was investigated spectrometric channel response on exposure to ionizing radiation from a source of alpha particles 239Pu and test input signals, thus we determined basic technical characteristics including energy resolution and noise characteristics. As a result, research found, that the output signal has the following timings: rise time - 1 us (levels of 0.1-0.9), peak time - 1.4 us, fall time - 1.8 us pulse width - 3.5 us. The conversion factor of module working with silicon detector (area of ​​1000 mm2 and a capacity 500 pF) consists about 10.6 mV / fC, or 0.47 V / MeV. Integral nonlinearity of spectrometer path is not worse 0.4% in the range from about 0.1 to 3.2 V. The energy resolution was 89.1 keV line of 5157 keV. The experimental studies revealed that using an external low-noise transistors developed module can be used in the construction of standard radiometric paths. It is appropriate to use the developed design-circuit solutions for implementing 4-channel chip for multi-channel radiometric and spectrometric systems.

Keywords: silicon detector, charge sensitive amplifier, spectrometer, radiometric system, ionizing radiation

Classical implementation of active selective amplifiers (SA) are usually associated with design sophisticated active elements (operational amplifiers) that consume relatively large power from their universality. This paper present the active SA based on an analog array chip ABMK_1_3, that have high level of radiation resistance to the flow of neutrons and accumulated dose of radiation. This SA implemented on the basis of a voltage-to-current converter with a minimum number of transistors and low consumption static current. Efficient use of current amplifier can be explained by use frequency dependent symmetric chains in a feedback loop. This property provides the independence of the pole frequency f0 = fp on the gain of the active element, as well as maximizing the quality factor.
The basic analytical expressions that establish the relationships between the SA and the characteristics of active and passive components are given. The relations that help minimize sensitivity of parameters SA to instability properties of the components are considered. Simulation results of desired SA are shown.  

Keywords: selective amplifier, bandpass filter, active RC-filter, analog array chip, radiation hardness

The features of circuit engineering and results of chip computer simulation which consists of 4-channel operational amplifier (op amp) and 2-channel electrometric voltage follower, designed for pre-processing of sensors signals in high-energy physics are considered. 
The characteristic properties of designed op amp are the absence of current source in the input differential stage and the use of parallel high-frequency channel for increasing of the bandwidth and slew rate.
The results of experimental research that have confirmed the low sensitivity of the parameters of designed integrated circuits created on the field programmable gate array "FGPA-1.3" without the horizontal p-n-p transistors to the influence of gamma-irradiation and electrons with energy of 4 MeV are given.  

Keywords: operational amplifier, field programmable gate array, voltage follower, sensor, sensing element, radiation resistance.

The paper discusses the features of method of extension of circuit’s operating frequency range of the source and the classical emitter voltage follower (VF). The features of this method based on the effect of the mutual compensation of the parasitic impedances are considered. Problem of improving operation speed of VF with output capacitance and reducing the time of establishment of transient at pulsed input voltage are discussed.
The simulation results of VF in Cadence on model of SiGe integrated transistors are given. This shows that with capacitive load high-frequency cutoff, the time of establishment of transient and the slew rate improved to tens - hundreds of times. 
The results of investigate complement of methods of improving operation speed of the classical stage with a common drain and common collector.

Keywords: operating frequency range, source follower, emitter follower, operational speed, broadband amplifier

This article addresses options for building advanced of resistive voltage dividers (attenuator), providing a reduction in a given number of once input voltage in a wide range of operating frequencies. To correct the frequency error in the AT parasitic capacitance the load is proposed modified scheme with the special frequency attenuator correction, which allows for one to two orders extend the range of working frequencies the AT and increase performance.
Results of computer modeling.

Keywords: attenuator, a resistive voltage divider, the parasitic capacitance load correction capacitor, speed, large-amplitude pulse signal, the compensation effect, the upper frequency limit, broadband, analog-to-digital interfaces

  This paper presents a method of constructing microwave selective amplifiers, which allows control Q and voltage gain at the frequency of quasi-resonance. The presented architecture selective amplifiers for SiGe process technology have low power consumption.

Keywords: RC-filter, good quality, controlled selective amplifier, gain, frequency quasi-resonance

  This paper presents a generalized framework level band pass filter used in the construction of broadband active RC filters. The conditions that determine the potential stability of the broadband link and its parameters. A variant of circuit implementation, in which low parametric sensitivity of Q to passive circuit elements is achieved on the basis of its own compensate small-signal parameters of bipolar transistors parameters amplification. The results of computer simulations have confirmed that the principle of self compensate coupling semiconductor can significantly reduce the sensitivity of the parametric parts of the second-order band-pass filters based on existing low technologies.

Keywords: system-on-chip, band pass filter, quality, current amplifier, the sensitivity, bipolar transistor

  The paper discusses the features of their own circuits and mutual compensation circuitry in a differential stage in CMOS transistors. It is shown that their composition can significantly increase the differential gain in symmetric cascades with a dynamic load, significantly reduce common mode gain and extend the range of operating frequencies. As an example, the evolution of the basic concept of a symmetric stage and the results of its simulation in Cadence Virtuoso.

Keywords: micro circuitry, structural synthesis, complex-function blocks, a differential stage, a CMOS transistor, system-on-chip

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