×

You are using an outdated browser Internet Explorer. It does not support some functions of the site.

Recommend that you install one of the following browsers: Firefox, Opera or Chrome.

Contacts:

+7 961 270-60-01
ivdon3@bk.ru

  • Micropower selective amplifier in basis in radiation-hard process technology ABMK_1_3

    Classical implementation of active selective amplifiers (SA) are usually associated with design sophisticated active elements (operational amplifiers) that consume relatively large power from their universality. This paper present the active SA based on an analog array chip ABMK_1_3, that have high level of radiation resistance to the flow of neutrons and accumulated dose of radiation. This SA implemented on the basis of a voltage-to-current converter with a minimum number of transistors and low consumption static current. Efficient use of current amplifier can be explained by use frequency dependent symmetric chains in a feedback loop. This property provides the independence of the pole frequency f0 = fp on the gain of the active element, as well as maximizing the quality factor.
    The basic analytical expressions that establish the relationships between the SA and the characteristics of active and passive components are given. The relations that help minimize sensitivity of parameters SA to instability properties of the components are considered. Simulation results of desired SA are shown.  

    Keywords: selective amplifier, bandpass filter, active RC-filter, analog array chip, radiation hardness

  • The method of extension operating frequency range of source and emitter voltage follower

    The paper discusses the features of method of extension of circuit’s operating frequency range of the source and the classical emitter voltage follower (VF). The features of this method based on the effect of the mutual compensation of the parasitic impedances are considered. Problem of improving operation speed of VF with output capacitance and reducing the time of establishment of transient at pulsed input voltage are discussed.
    The simulation results of VF in Cadence on model of SiGe integrated transistors are given. This shows that with capacitive load high-frequency cutoff, the time of establishment of transient and the slew rate improved to tens - hundreds of times. 
    The results of investigate complement of methods of improving operation speed of the classical stage with a common drain and common collector.

    Keywords: operating frequency range, source follower, emitter follower, operational speed, broadband amplifier

  • Attenuator for high-speed input circuit analog-digital interfaces

    This article addresses options for building advanced of resistive voltage dividers (attenuator), providing a reduction in a given number of once input voltage in a wide range of operating frequencies. To correct the frequency error in the AT parasitic capacitance the load is proposed modified scheme with the special frequency attenuator correction, which allows for one to two orders extend the range of working frequencies the AT and increase performance.
    Results of computer modeling.

    Keywords: attenuator, a resistive voltage divider, the parasitic capacitance load correction capacitor, speed, large-amplitude pulse signal, the compensation effect, the upper frequency limit, broadband, analog-to-digital interfaces