The methods and results of designing instrumentation amplifiers multidifferential on two operational amplifiers that significantly reduce the voltage of zero drift circuit and its transfer efficiency of the common-mode voltage. In practical terms, these methods can solve the important task of building a precision analog interface for resistive bridge sensors, which operate over a wide temperature range. Also, it is possible to use multi-bit ADC with a significantly lower reference voltage. Keywords: mixed systems on a chip, instrumentation amplifiers, common-mode signal, multidifferential DU, voltage zero drift, temperature range, multibit ADC.
Keywords: mixed systems on a chip, instrumentation amplifiers, common-mode signal, multidifferential OA, voltage zero drift, temperature range, multibit ADC.
This paper present method of speed increasing differential and no differential driver (output stage transistor logic, emitter and source followers, the circuit of feedback amplifiers, etc.). Сonsiders conditions of correcting circuits design, which compensates the effect of the parasitic capacitance to its range of operating frequencies and the settling time of the transition process.
Keywords: drivers, emitter and source followers, operational amplifier, correcting circuit, performance, upper frequency limit, rise time transient, stability.
Сollector mm-wave load circuit of differential stages, as well as the optimization of Q-factor are considered. Optimization of the form of microstrip line in order to increase quality factor is shown. Differential line shorted at one end, at the resonant frequency in the operating mode of the standing wave. At the shorted end of the line voltage is at minimum level, while the current at the maximum, so losses are mainly due to the series resistance of the microstrip line. On the other side of the line, the current is minimized, and the voltage - maximum, so the parasitic losses associated with shunt conductance between the differential lines. This effect use for reducing line losses and increasing the Q-factor. To this end, at the shorted end of the line is necessary to increase the line width and the gap between them, and at the other end to reduce the width and gap.
Keywords: resonant circuit, SiGe, mm-wave, BiCMOS, monolithic integrated circuit