The simulation of the process of the electrically active impurities relocation in the electric field of Schottky diode space charge region has been made. The analysis of the simulation results shows the possibility of controlled alloying impurities relocation on the depth about tens of nanometers caused by electrically active atoms diffusion in the electric field of Schottky diode space charge region.
Keywords: diffusion, space charge region, Schottky diode
Proposed to use a sensor based on surface acoustic wave (SAW), which represents a delay line with unidirectional interdigital transducers (IDT) for measuring the pressure in the liquid. Reflective IDT loaded by series connected inductor and two capacities. One of these capacities - this trimmer, and another - a membrane capacitor whose capacitance depends on the pressure. When the pressure changes of the membrane capacitance capacitor, which changes the reflectivity of the reflective IDT. The magnitude of changes in this ratio determines the pressure applied to the membrane capacity.
Keywords: Sensor, pressure, surface acoustic wave, pulse answer, liquid